氮化铝外延片
上海奥麦达微提供蓝宝石基氮化铝外延片，
制备工艺：MOCVD
可向客户提供尺寸2/4/6英寸，氮化铝 薄膜厚度200-1000nm的高质量标准蓝宝石基氮化 铝模板。同时也可以向客户定制相应尺寸，膜厚 50-5000nm的非标蓝宝石基氮化铝模板。产品在 UV-LED芯片、紫外探测器等领域有广泛运用
规格书：
| Specifications | paameter value | ||||
| ProductNumber | UTI-AIN-050A | UTI-AIN-100A | UTI-AIN-150A | ||
| substrate | Sapphire C-side | ||||
| AIN epitaxial layer cystal structure | Wurtzite | ||||
| Diameter(inches) | 2 | 4 | 6 | ||
| Substrate thickmess(m) | 430±15 | 650±20 | 1300±20 | ||
| AIN epitaxial layer thickmes5(nm) | 200/400/600/800/1000 or customized.The parameters in this table are based on 200mm as am example | ||||
| Crystal orientation | C-axis [0001]+/-0.2° | ||||
| crack | nothing | ||||
| Back roughness(m) | RMS<1.2 | ||||
| HRXRD half width @(0002)(arcsec) | <100 | ||||
| HRXRD half width@(10-12)(arcsec) | <350 | ||||
| Surface roughnes5[5×5um](nm) | Ra≤2 | ||||
| Total thickmess variation(m) | ≤10 | ≤20 | ≤20 | ||
| Warping degree(m) | ≤20 | ≤40 | ≤60 | ||
| Bending degree(m) | ≤20 | ≤40 | ≤60 | ||
| Packaging | Single wafer round box/Multi wafer round box | ||||
Fig1:外延层表面粗糙度
Fig2：蓝宝石基AlN薄膜模板002/102 HRXRD半高宽
